Si-based multilayer structures, such as porous silicon (PS) and germanium silicon (ε-Si), are widely used in current microelectronics and Micro-electromechanical Systems (MEMS). During the preparing process of Si-based multilayer structures, some inhomogeneous residual stress is induced, maybe finally leading to structure failure. Micro-Raman Spectroscopy (MRS) is regarded as an effective method for intrinsic stress measurement. In this work, MRS is applied to analysis the residual stress distribution along the cross section of Si-based multilayer structure. Raman experimental results show that there are noticeable residual stress in both silicon substrate and the films (including porous silicon film and germanium-silicon buffer layers). The residual stress is linearly varied in most regions, which leads to an overall warp of the structure. While nonlinear variation of residual stress appears at the interface between different films and Si-substrate. Based on the experimental results, a spectra-mechanical model for analyzing the transversely-isotropic material like porous silicon was presented. A set of detailed Raman stress relationship of porous silicon was achieved. For the study of strained silicon wafer, the structural analyses by using high-resolution transmission electron microscope (HR-TEM) were cooperated with the residual stress measurement by Micro-Raman. And an analysis procedure of the residual stress evaluation on multilayer germanium silicon structures was introduced.
| Published in |
Optics (Volume 4, Issue 3-1)
This article belongs to the Special Issue Optical Techniques for Deformation, Structure and Shape Evaluation |
| DOI | 10.11648/j.optics.s.2015040301.18 |
| Page(s) | 33-38 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
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Copyright © The Author(s), 2015. Published by Science Publishing Group |
Residual Stress, Si-based Multilayer Structure, Micro-Raman Spectroscopy, Porous Silicon, Germanium Silicon
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APA Style
Wei Qiu, CuiLi Cheng, Yu Cheng Zhao, Qiu Li. (2015). Residual Stress Measurement in Si-based Multilayer Structure by Micro-Raman Spectroscopy. Optics, 4(3-1), 33-38. https://doi.org/10.11648/j.optics.s.2015040301.18
ACS Style
Wei Qiu; CuiLi Cheng; Yu Cheng Zhao; Qiu Li. Residual Stress Measurement in Si-based Multilayer Structure by Micro-Raman Spectroscopy. Optics. 2015, 4(3-1), 33-38. doi: 10.11648/j.optics.s.2015040301.18
AMA Style
Wei Qiu, CuiLi Cheng, Yu Cheng Zhao, Qiu Li. Residual Stress Measurement in Si-based Multilayer Structure by Micro-Raman Spectroscopy. Optics. 2015;4(3-1):33-38. doi: 10.11648/j.optics.s.2015040301.18
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Download@article{10.11648/j.optics.s.2015040301.18,
author = {Wei Qiu and CuiLi Cheng and Yu Cheng Zhao and Qiu Li},
title = {Residual Stress Measurement in Si-based Multilayer Structure by Micro-Raman Spectroscopy},
journal = {Optics},
volume = {4},
number = {3-1},
pages = {33-38},
doi = {10.11648/j.optics.s.2015040301.18},
url = {https://doi.org/10.11648/j.optics.s.2015040301.18},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.optics.s.2015040301.18},
abstract = {Si-based multilayer structures, such as porous silicon (PS) and germanium silicon (ε-Si), are widely used in current microelectronics and Micro-electromechanical Systems (MEMS). During the preparing process of Si-based multilayer structures, some inhomogeneous residual stress is induced, maybe finally leading to structure failure. Micro-Raman Spectroscopy (MRS) is regarded as an effective method for intrinsic stress measurement. In this work, MRS is applied to analysis the residual stress distribution along the cross section of Si-based multilayer structure. Raman experimental results show that there are noticeable residual stress in both silicon substrate and the films (including porous silicon film and germanium-silicon buffer layers). The residual stress is linearly varied in most regions, which leads to an overall warp of the structure. While nonlinear variation of residual stress appears at the interface between different films and Si-substrate. Based on the experimental results, a spectra-mechanical model for analyzing the transversely-isotropic material like porous silicon was presented. A set of detailed Raman stress relationship of porous silicon was achieved. For the study of strained silicon wafer, the structural analyses by using high-resolution transmission electron microscope (HR-TEM) were cooperated with the residual stress measurement by Micro-Raman. And an analysis procedure of the residual stress evaluation on multilayer germanium silicon structures was introduced.},
year = {2015}
}
TY - JOUR T1 - Residual Stress Measurement in Si-based Multilayer Structure by Micro-Raman Spectroscopy AU - Wei Qiu AU - CuiLi Cheng AU - Yu Cheng Zhao AU - Qiu Li Y1 - 2015/11/29 PY - 2015 N1 - https://doi.org/10.11648/j.optics.s.2015040301.18 DO - 10.11648/j.optics.s.2015040301.18 T2 - Optics JF - Optics JO - Optics SP - 33 EP - 38 PB - Science Publishing Group SN - 2328-7810 UR - https://doi.org/10.11648/j.optics.s.2015040301.18 AB - Si-based multilayer structures, such as porous silicon (PS) and germanium silicon (ε-Si), are widely used in current microelectronics and Micro-electromechanical Systems (MEMS). During the preparing process of Si-based multilayer structures, some inhomogeneous residual stress is induced, maybe finally leading to structure failure. Micro-Raman Spectroscopy (MRS) is regarded as an effective method for intrinsic stress measurement. In this work, MRS is applied to analysis the residual stress distribution along the cross section of Si-based multilayer structure. Raman experimental results show that there are noticeable residual stress in both silicon substrate and the films (including porous silicon film and germanium-silicon buffer layers). The residual stress is linearly varied in most regions, which leads to an overall warp of the structure. While nonlinear variation of residual stress appears at the interface between different films and Si-substrate. Based on the experimental results, a spectra-mechanical model for analyzing the transversely-isotropic material like porous silicon was presented. A set of detailed Raman stress relationship of porous silicon was achieved. For the study of strained silicon wafer, the structural analyses by using high-resolution transmission electron microscope (HR-TEM) were cooperated with the residual stress measurement by Micro-Raman. And an analysis procedure of the residual stress evaluation on multilayer germanium silicon structures was introduced. VL - 4 IS - 3-1 ER -
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