Nanosize Clusters in InAs and InP Compounds and Their Solid Solutions InP<sub>x</sub>As<sub>1–x</sub>

Nodar Kekelidze; Elza Khutsishvili; Zaur Kvinikadze; Zinaida Davitaja; David Kekelidze; Bela Kvirkvelia; Ketevan Sadradze; Lali Nadiradze; George Kekelidze

doi:doi:10.11648/j.nano.s.2017050301.21

Nanosize Clusters in InAs and InP Compounds and Their Solid Solutions InP_xAs_1–x

Nodar Kekelidze, Elza Khutsishvili, Zaur Kvinikadze, Zinaida Davitaja, David Kekelidze, Bela Kvirkvelia, Ketevan Sadradze, Lali Nadiradze, George Kekelidze

Published in American Journal of Nano Research and Applications (Volume 5, Issue 3-1)

Received: 3 February 2017 Accepted: 4 February 2017 Published: 28 February 2017

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Abstract

The compounds of indium arsenide, indium phosphide and their solid solutions are important materials for optoelectronics, microelectronics and nanotechnology. The stabilization of nanoparticles is a major problem in modern nanotechnology. The presented work can provide valuable information in the indicated direction. It has been shown that, it is possible to create nanoscale clusters and stable point type defects in crystals with the help of hard radiation. Investigations of very slow diffusion processes in irradiated crystals allow to reveal “abnormal” behavior of nanoscale clusters. It has been shown that in certain materials, the curves of the frequency dependence of the optical absorption coefficient near the fundamental edge at 300 K for a long time (about two years) do not shift to the “restoration”, but move to the opposite direction. We studied the electrical and optical properties and the heat treatment processes of crystals irradiated with fast neutron fluence (2 · 10¹⁸ n / cm²) and high-energy (50 MeV) electrons (6.0 • 10¹⁷ e / cm²). As a result, the mechanism of revealed “anomalous” phenomena has been established. We found that nanosize clusters contribute to a significant increase in the basic parameter of the thermoelectric material’s thermoelectric efficiency. Scattering mechanism s of electrons on nanosize clusters has been also established. In addition the possible influence of nanoscale clusters as well as small point type defects on important parameters of the materials, in particular, the charge carriers concentration and mobility, electrons effectivemass, dispersion of the conduction band, and crystal lattice vibrations have been analyzed. Using the properties of small defects, radiation-resistant materials were created, with standing very high dose of hard radiation.

Published in	American Journal of Nano Research and Applications (Volume 5, Issue 3-1) This article belongs to the Special Issue Nanotechnologies
DOI	10.11648/j.nano.s.2017050301.21
Page(s)	48-55
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2017. Published by Science Publishing Group

Keywords

Nanosize Clusters, Radiation, Semiconductors

References

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Nodar Kekelidze, Elza Khutsishvili, Zaur Kvinikadze, Zinaida Davitaja, David Kekelidze, et al. (2017). Nanosize Clusters in InAs and InP Compounds and Their Solid Solutions InPxAs1–x. American Journal of Nano Research and Applications, 5(3-1), 48-55. https://doi.org/10.11648/j.nano.s.2017050301.21

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ACS Style

Nodar Kekelidze; Elza Khutsishvili; Zaur Kvinikadze; Zinaida Davitaja; David Kekelidze, et al. Nanosize Clusters in InAs and InP Compounds and Their Solid Solutions InPxAs1–x. Am. J. Nano Res. Appl. 2017, 5(3-1), 48-55. doi: 10.11648/j.nano.s.2017050301.21

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AMA Style

Nodar Kekelidze, Elza Khutsishvili, Zaur Kvinikadze, Zinaida Davitaja, David Kekelidze, et al. Nanosize Clusters in InAs and InP Compounds and Their Solid Solutions InPxAs1–x. Am J Nano Res Appl. 2017;5(3-1):48-55. doi: 10.11648/j.nano.s.2017050301.21

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@article{10.11648/j.nano.s.2017050301.21,
  author = {Nodar Kekelidze and Elza Khutsishvili and Zaur Kvinikadze and Zinaida Davitaja and David Kekelidze and Bela Kvirkvelia and Ketevan Sadradze and Lali Nadiradze and George Kekelidze},
  title = {Nanosize Clusters in InAs and InP Compounds and Their Solid Solutions InPxAs1–x},
  journal = {American Journal of Nano Research and Applications},
  volume = {5},
  number = {3-1},
  pages = {48-55},
  doi = {10.11648/j.nano.s.2017050301.21},
  url = {https://doi.org/10.11648/j.nano.s.2017050301.21},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.s.2017050301.21},
  abstract = {The compounds of indium arsenide, indium phosphide and their solid solutions are important materials for optoelectronics, microelectronics and nanotechnology. The stabilization of nanoparticles is a major problem in modern nanotechnology. The presented work can provide valuable information in the indicated direction. It has been shown that, it is possible to create nanoscale clusters and stable point type defects in crystals with the help of hard radiation. Investigations of very slow diffusion processes in irradiated crystals allow to reveal “abnormal” behavior of nanoscale clusters. It has been shown that in certain materials, the curves of the frequency dependence of the optical absorption coefficient near the fundamental edge at 300 K for a long time (about two years) do not shift to the “restoration”, but move to the opposite direction. We studied the electrical and optical properties and the heat treatment processes of crystals irradiated with fast neutron fluence (2 · 1018 n / cm2) and high-energy (50 MeV) electrons (6.0 • 1017 e / cm2). As a result, the mechanism of revealed “anomalous” phenomena has been established. We found that nanosize clusters contribute to a significant increase in the basic parameter of the thermoelectric material’s thermoelectric efficiency. Scattering mechanism s of electrons on nanosize clusters has been also established. In addition the possible influence of nanoscale clusters as well as small point type defects on important parameters of the materials, in particular, the charge carriers concentration and mobility, electrons effectivemass, dispersion of the conduction band, and crystal lattice vibrations have been analyzed. Using the properties of small defects, radiation-resistant materials were created, with standing very high dose of hard radiation.},
 year = {2017}
}

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TY  - JOUR
T1  - Nanosize Clusters in InAs and InP Compounds and Their Solid Solutions InPxAs1–x
AU  - Nodar Kekelidze
AU  - Elza Khutsishvili
AU  - Zaur Kvinikadze
AU  - Zinaida Davitaja
AU  - David Kekelidze
AU  - Bela Kvirkvelia
AU  - Ketevan Sadradze
AU  - Lali Nadiradze
AU  - George Kekelidze
Y1  - 2017/02/28
PY  - 2017
N1  - https://doi.org/10.11648/j.nano.s.2017050301.21
DO  - 10.11648/j.nano.s.2017050301.21
T2  - American Journal of Nano Research and Applications
JF  - American Journal of Nano Research and Applications
JO  - American Journal of Nano Research and Applications
SP  - 48
EP  - 55
PB  - Science Publishing Group
SN  - 2575-3738
UR  - https://doi.org/10.11648/j.nano.s.2017050301.21
AB  - The compounds of indium arsenide, indium phosphide and their solid solutions are important materials for optoelectronics, microelectronics and nanotechnology. The stabilization of nanoparticles is a major problem in modern nanotechnology. The presented work can provide valuable information in the indicated direction. It has been shown that, it is possible to create nanoscale clusters and stable point type defects in crystals with the help of hard radiation. Investigations of very slow diffusion processes in irradiated crystals allow to reveal “abnormal” behavior of nanoscale clusters. It has been shown that in certain materials, the curves of the frequency dependence of the optical absorption coefficient near the fundamental edge at 300 K for a long time (about two years) do not shift to the “restoration”, but move to the opposite direction. We studied the electrical and optical properties and the heat treatment processes of crystals irradiated with fast neutron fluence (2 · 1018 n / cm2) and high-energy (50 MeV) electrons (6.0 • 1017 e / cm2). As a result, the mechanism of revealed “anomalous” phenomena has been established. We found that nanosize clusters contribute to a significant increase in the basic parameter of the thermoelectric material’s thermoelectric efficiency. Scattering mechanism s of electrons on nanosize clusters has been also established. In addition the possible influence of nanoscale clusters as well as small point type defects on important parameters of the materials, in particular, the charge carriers concentration and mobility, electrons effectivemass, dispersion of the conduction band, and crystal lattice vibrations have been analyzed. Using the properties of small defects, radiation-resistant materials were created, with standing very high dose of hard radiation.
VL  - 5
IS  - 3-1
ER  -

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Author Information

Nodar Kekelidze

Semiconductor Materials Science Laboratory, F. Tavadze Institute of Metallurgy & Materials Science, Tbilisi, Georgia
Elza Khutsishvili

Semiconductor Materials Science Laboratory, F. Tavadze Institute of Metallurgy & Materials Science, Tbilisi, Georgia
Zaur Kvinikadze

Substance Research Institute, I. Javakhishvili Tbilisi State University, Tbilisi, Georgia
Zinaida Davitaja

Substance Research Institute, I. Javakhishvili Tbilisi State University, Tbilisi, Georgia
David Kekelidze

Semiconductor Materials Science Laboratory, F. Tavadze Institute of Metallurgy & Materials Science, Tbilisi, Georgia
Bela Kvirkvelia

Semiconductor Materials Science Laboratory, F. Tavadze Institute of Metallurgy & Materials Science, Tbilisi, Georgia
Ketevan Sadradze

Faculty of Informatics & Control Systems, Georgian Technical University, Tbilisi, Georgia
Lali Nadiradze

Faculty of Informatics & Control Systems, Georgian Technical University, Tbilisi, Georgia
George Kekelidze

BoT, Eurosolar, Bonn, Germany

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APA Style

Nodar Kekelidze, Elza Khutsishvili, Zaur Kvinikadze, Zinaida Davitaja, David Kekelidze, et al. (2017). Nanosize Clusters in InAs and InP Compounds and Their Solid Solutions InPxAs1–x. American Journal of Nano Research and Applications, 5(3-1), 48-55. https://doi.org/10.11648/j.nano.s.2017050301.21

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ACS Style

Nodar Kekelidze; Elza Khutsishvili; Zaur Kvinikadze; Zinaida Davitaja; David Kekelidze, et al. Nanosize Clusters in InAs and InP Compounds and Their Solid Solutions InPxAs1–x. Am. J. Nano Res. Appl. 2017, 5(3-1), 48-55. doi: 10.11648/j.nano.s.2017050301.21

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AMA Style

Nodar Kekelidze, Elza Khutsishvili, Zaur Kvinikadze, Zinaida Davitaja, David Kekelidze, et al. Nanosize Clusters in InAs and InP Compounds and Their Solid Solutions InPxAs1–x. Am J Nano Res Appl. 2017;5(3-1):48-55. doi: 10.11648/j.nano.s.2017050301.21

Copy | Download

@article{10.11648/j.nano.s.2017050301.21,
  author = {Nodar Kekelidze and Elza Khutsishvili and Zaur Kvinikadze and Zinaida Davitaja and David Kekelidze and Bela Kvirkvelia and Ketevan Sadradze and Lali Nadiradze and George Kekelidze},
  title = {Nanosize Clusters in InAs and InP Compounds and Their Solid Solutions InPxAs1–x},
  journal = {American Journal of Nano Research and Applications},
  volume = {5},
  number = {3-1},
  pages = {48-55},
  doi = {10.11648/j.nano.s.2017050301.21},
  url = {https://doi.org/10.11648/j.nano.s.2017050301.21},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.s.2017050301.21},
  abstract = {The compounds of indium arsenide, indium phosphide and their solid solutions are important materials for optoelectronics, microelectronics and nanotechnology. The stabilization of nanoparticles is a major problem in modern nanotechnology. The presented work can provide valuable information in the indicated direction. It has been shown that, it is possible to create nanoscale clusters and stable point type defects in crystals with the help of hard radiation. Investigations of very slow diffusion processes in irradiated crystals allow to reveal “abnormal” behavior of nanoscale clusters. It has been shown that in certain materials, the curves of the frequency dependence of the optical absorption coefficient near the fundamental edge at 300 K for a long time (about two years) do not shift to the “restoration”, but move to the opposite direction. We studied the electrical and optical properties and the heat treatment processes of crystals irradiated with fast neutron fluence (2 · 1018 n / cm2) and high-energy (50 MeV) electrons (6.0 • 1017 e / cm2). As a result, the mechanism of revealed “anomalous” phenomena has been established. We found that nanosize clusters contribute to a significant increase in the basic parameter of the thermoelectric material’s thermoelectric efficiency. Scattering mechanism s of electrons on nanosize clusters has been also established. In addition the possible influence of nanoscale clusters as well as small point type defects on important parameters of the materials, in particular, the charge carriers concentration and mobility, electrons effectivemass, dispersion of the conduction band, and crystal lattice vibrations have been analyzed. Using the properties of small defects, radiation-resistant materials were created, with standing very high dose of hard radiation.},
 year = {2017}
}

Copy | Download

TY  - JOUR
T1  - Nanosize Clusters in InAs and InP Compounds and Their Solid Solutions InPxAs1–x
AU  - Nodar Kekelidze
AU  - Elza Khutsishvili
AU  - Zaur Kvinikadze
AU  - Zinaida Davitaja
AU  - David Kekelidze
AU  - Bela Kvirkvelia
AU  - Ketevan Sadradze
AU  - Lali Nadiradze
AU  - George Kekelidze
Y1  - 2017/02/28
PY  - 2017
N1  - https://doi.org/10.11648/j.nano.s.2017050301.21
DO  - 10.11648/j.nano.s.2017050301.21
T2  - American Journal of Nano Research and Applications
JF  - American Journal of Nano Research and Applications
JO  - American Journal of Nano Research and Applications
SP  - 48
EP  - 55
PB  - Science Publishing Group
SN  - 2575-3738
UR  - https://doi.org/10.11648/j.nano.s.2017050301.21
AB  - The compounds of indium arsenide, indium phosphide and their solid solutions are important materials for optoelectronics, microelectronics and nanotechnology. The stabilization of nanoparticles is a major problem in modern nanotechnology. The presented work can provide valuable information in the indicated direction. It has been shown that, it is possible to create nanoscale clusters and stable point type defects in crystals with the help of hard radiation. Investigations of very slow diffusion processes in irradiated crystals allow to reveal “abnormal” behavior of nanoscale clusters. It has been shown that in certain materials, the curves of the frequency dependence of the optical absorption coefficient near the fundamental edge at 300 K for a long time (about two years) do not shift to the “restoration”, but move to the opposite direction. We studied the electrical and optical properties and the heat treatment processes of crystals irradiated with fast neutron fluence (2 · 1018 n / cm2) and high-energy (50 MeV) electrons (6.0 • 1017 e / cm2). As a result, the mechanism of revealed “anomalous” phenomena has been established. We found that nanosize clusters contribute to a significant increase in the basic parameter of the thermoelectric material’s thermoelectric efficiency. Scattering mechanism s of electrons on nanosize clusters has been also established. In addition the possible influence of nanoscale clusters as well as small point type defects on important parameters of the materials, in particular, the charge carriers concentration and mobility, electrons effectivemass, dispersion of the conduction band, and crystal lattice vibrations have been analyzed. Using the properties of small defects, radiation-resistant materials were created, with standing very high dose of hard radiation.
VL  - 5
IS  - 3-1
ER  -

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